TGA8286 Datasheet, PDF (1/7 Pages) TriQuint Semiconductor – 8 - 10.5 GHz Power Amplifier

Product Data Sheet
8 - 10.5 GHz Power Amplifier
TGA8286-EPU
Key Features and Performance
• 8 to 10.5 GHz Frequency Range,
X-band
• Two Stage 5-W HFET Power Amplifier
• 37% P.A.E. at 2 to 3 dB Gain
Compression
• 17 dB Small Signal Gain
• Bias can be applied from either the
upper or lower edges
• 5.384 x 2.997 x 0.1016 mm (0.212 x
0.118 x 0.004 in.)
Description
The TriQuint TGA8286-EPU is a GaAs monolithic amplifier designed for use as an
X-band power amplifier. A 2.4mm and a 9.6mm HFET provide 16 dB nominal gain
from 8 to 10.5 GHz with a typical 37% power-added efficiency at 2 to 3 dB gain
compression. Ground is provided to the circuitry through vias to the backside
metallization. The TGA8286-EPU effectively addresses applications such as an X-
band radar transmitter or a microwave communication transmitter.
The TGA8286-EPU is supplied in chip form and is engineered for high volume
automated assembly. All metal surfaces are gold plated to be compatiable with
thermocompression and thermosonic wire bonding processes.
TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Web: www.triquint.com
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