TGA5108_15 Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – High Linearity LNA Gain Block

Applications
• Repeaters
• Mobile Infrastructure
• Defense/Aerospace
• LTE / WCDMA / EDGE / CDMA
• General Purpose Wireless
• IF amplifier, RF driver amplifier
• Military Communications
TGA5108
High Linearity LNA Gain Block
Product Features
• Frequency Range: 0.05 – 4.0 GHz
• NF: 1.2 dB (@ 1.9 GHz)
• Output IP3: +35 dBm (@ 1.9 GHz, 4 dBm/tone Pout)
• P1dB : +20 dBm (@1.9 GHz)
• Small Signal Gain: 20 dB (@ 1.9 GHz)
• +5V Single Supply, 85 mA Current
• Chip Dimensions: 1.49 x 0.85 x 0.085 mm
Functional Block Diagram
General Description
The TriQuint TGA5108 is a high linearity Low Noise
Amplifier. The amplifier is fabricated using TriQuint's
TQPED process. It is internally matched and only
requires an external RF choke and blocking/bypass
capacitors for operation from a single +5V supply. The
internal active bias circuit also enables stable operation
over bias and temperature variations.
The TGA5108 covers the 0.05−4.0 GHz frequency
band and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Die attach should be accomplished with conductive
epoxy only. Eutectic attach is not recommended.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF Input
(Opt.) External Cap.
(Opt.) External Cap.
RF Output / Bias
Ordering Information
Part
TGA5108
ECCN
EAR99
Description
High Linearity LNA
Gain Block
Datasheet: Rev - 06-19-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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