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TGA4935_15 Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – High Linearity LNA Gain Block | |||
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Applications
⢠Repeaters
⢠Mobile Infrastructure
⢠LTE / WCDMA / CDMA / GSM
⢠General Purpose Wireless
⢠TDD or FDD systems
⢠Military Communications
TGA4935
High Linearity LNA Gain Block
Product Features
⢠Frequency Range: 0.05 â 4.0 GHz
⢠NF: 0.8 dB (@ 1.9 GHz)
⢠Output IP3: +37 dBm (@ 1.9 GHz, 4 dBm/tone Pout)
⢠P1dB: +23 dBm (@ 1.9 GHz)
⢠Small Signal Gain: 16 dB (@ 1.9 GHz)
⢠+5V Single Supply, 115 mA Current
⢠Chip Dimensions: 1.49 x 0.85 x 0.085 mm
Functional Block Diagram
General Description
The TriQuint TGA4935 is a high linearity Low Noise
Amplifier. The amplifier is fabricated using TriQuint's
TQPED process. It is internally matched and only
requires an external RF choke and blocking/bypass
capacitors for operation from a single +5V supply. The
internal active bias circuit also enables stable operation
over bias and temperature variations.
The TGA4935 covers the 0.05â4.0 GHz frequency
band and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Die attach should be accomplished with conductive
epoxy only. Eutectic attach is not recommended.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
Symbol
RF Input
RF Output/Bias
Ordering Information
Part
TGA4935
ECCN
EAR99
Description
High Linearity LNA
Gain Block
Datasheet: Rev - 06-19-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com
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