TGA4516_15 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – Ka Band 2W Power Amplifier

TGA4516
Ka Band 2W Power Amplifier
Key Features
• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq (1.9A under RF
Drive)
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Primary Applications
• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio
Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka-band applications. The part is
designed using TriQuint’s 0.15um power pHEMT
process. The small chip size is achieved by utilizing
TriQuint’s 3 metal layer interconnect (3MI) design
technology that allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated output
power, and has typical gain of 18 dB at a bias of 6V
and 1050mA (Idq). The current rises to 1.9A under RF
drive.
This HPA is ideally suited for many applications such
as Military Radar Systems, Ka-band Sat-Com, and
Point-to-Point Radios.
The TGA4516 is 100% DC and RF tested on-wafer to
ensure performance compliance.
Lead-Free & RoHS compliant.
25
20
15
10
5
0
-5
-10
-15
-20
-25
30
35
34
33
32
31
30
30
Fixtured Data
V_D = 6V, I_D = 1050mA
S21
S22
S11
32
34
36
38
40
Frequency (GHz)
Pout @ Pin =20dBm
32
34
36
38
40
Frequency (GHz)
Datasheet subject to change without notice
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
July 2011 © Rev A