TGA4516 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – Ka-Band 2W Power Amplifier

Ka-Band 2W Power Amplifier
Advance Product Information
December 2, 2004
TGA4516
Key Features
• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq
(1.9A under RF Drive)
• 0.15 um 3MI MMW pHEMT Technology
• Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in
Product Description
The TriQuint TGA4516 is a High Power MMIC
Amplifier for Ka-band applications. The part
is designed using TriQuint’s 0.15um power
pHEMT process. The small chip size is
achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that
allows compaction of the design over
competing products.
The TGA4516 provides >33 dBm saturated
output power, and has typical gain of 18 dB at
a bias of 6V and 1050mA (Idq). The current
rises to 1.9A under RF drive.
This HPA is ideally suited for many
applications such as Military Radar Systems,
Ka-band Sat-Com, and Point-to-Point
Radios.
Primary Applications
• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio
Preliminary Fixtured Data
V_D = 6V, I_D = 1050mA
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
30
S21
S22
S11
32
34
36
38
40
Frequency (GHz)
Pout @ Pin =20dBm
35
34
33
32
The TGA4516 is 100% DC and RF tested
on-wafer to ensure performance compliance.
31
30
30
32
34
36
38
40
Frequency (GHz)
Note: This Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Email: [e-mail] Web: www.triquint.com ¹