TGA4516-TS_15 Datasheet, PDF (1/10 Pages) TriQuint Semiconductor – Ka-Band 2W Power Amplifier

Ka-Band 2W Power Amplifier
TGA4516-TS
Key Features
• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq (1.9A under RF Drive)
• 0.15 um 3MI MMW pHEMT Technology
• Thermal Spreader Dimensions:
2.921 x 2.438 mm
Primary Applications
• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio
Product Description
The TriQuint TGA4516 is a High Power MMIC Amplifier
for Ka-band applications. The part is designed using
TriQuint’s 0.15um power pHEMT process and is
soldered to a CuMo thermal spreader. The small chip
size is achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that allows
compaction of the design over competing products.
The TGA4516 provides >33 dBm saturated output
power, and has typical gain of 18 dB at a bias of 6V and
1050mA (Idq). The current rises to 1.9A under RF drive.
This HPA is ideally suited for many applications such as
Military Radar Systems, Ka-band Sat-Com, and Point-
to-Point Radios.
The TGA4516 is 100% DC and RF tested on-wafer to
ensure performance compliance.
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20
15
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5
0
-5
-10
-15
-20
-25
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35
34
Fixtured Data
V_D = 6V, I_D = 1050mA
S21
S22
S11
32
34
36
38
40
Frequency (GHz)
Pout @ Pin =20dBm
Lead-Free & RoHS compliant.
33
32
31
Datasheet subject to change without notice.
30
30
32
34
36
38
40
Frequency (GHz)
1
TriQuint Semiconductor www.triquint.com [phone] Fax: [phone] [e-mail]
November 2011 © Rev C