TGA4509-EPU Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – 27 - 31 GHz 1W Power Amplifier

Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier
TGA4509-EPU
Key Features
• 22 dB Nominal Gain @ 30 GHz
• 30 dBm Nominal Pout @ P1dB
• 25% PAE @ P1dB
• -10 dB Nominal Return Loss
• Built-in Power Detector
• 0.25-µm mmW pHEMT 3MI
• Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA
• Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm
(0.096 x 0.045 x 0.004 in)
Primary Applications
• Point to Point Radio
• Point to Multi-point Radio
• LMDS
• Satellite Ground Terminal
Fixtured Measured Performance
Data taken
@ 30 GHz
Bias Conditions: Vd = 6 V, Id =420 mA
30
25
20
15
S21
10
5
0
-5
-10
-15
S22
-20
S11
-25
-30
25
26
27
28
29
30
31
32
33
Frequency (GHz)
32
30
28
26
24
Pout
22
20
Gain
18
16
IDS
14
12
10
-12 -9
-6
-3
0
3
6
9
12 15 18
Pin (dBm)
34
1000
800
600
400
200
0
21
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
1