TGA2976-SM Datasheet, PDF (1/18 Pages) TriQuint Semiconductor – 0.1 – 3.0 GHz 10 W GaN Power Amplifier

Applications
 Commercial and military radar
 Communications
 Electronic Warfare
TGA2976-SM
0.1 – 3.0 GHz 10 W GaN Power Amplifier
Product Features
 Frequency Range: 0.1 – 3.0 GHz
 P_SAT: >40 dBm at PIN = 27 dBm
 PAE: 48% @ midband
 Large Signal Gain: >13 dB
 Small Signal Gain: >20 dB
 Bias: V_D = 40 V, I_DQ = 360 mA, V_G1 = -2.4 V Typical,
V_G2 = +17.7 V Typical
 Wideband Flat Gain and Power
 Package Dimensions: 4.0 x 4.0 x 1.64 mm
AC-QFN 4x4 mm 14L
Functional Block Diagram
14 13 12 11
1
RF IN 2
3
10
9 RF OUT
8
4 567
General Description
Pad Configuration
Qorvo’s TGA2976-SM is a wideband cascode amplifier
fabricated on Qorvo’s production 0.25um GaN on SiC
process. The cascode configuration offers exceptional
wideband performance as well as supporting 40 V
operation. The TGA2976-SM operates from 0.1 - 3.0
GHz and provides greater than 10 W of saturated output
power with greater than 13 dB of large signal gain and
greater than 38% power-added efficiency.
The TGA2976-SM is available in a low-cost, surface
mount 14 lead 4x4 Air Cavity laminate package. It is
ideally suited to support both radar and communication
applications across defense and commercial markets as
well as electronic warfare. The TGA2976-SM is fully
matched to 50Ω at both RF ports allowing for simple
system integration. DC blocks are required on both RF
ports and the drain voltage must be injected through an
off chip bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad No.
1, 3, 8, 10
2
4, 14
5, 7, 11, 13
6, 12
9
Symbol
GND
RF IN
VG1
N/C
VG2
RF OUT / VD
Ordering Information
Part
TGA2976-SM
ECCN
EAR99
Description
0.1 – 3.0 GHz 10 W
GaN Power Amplifier
Datasheet: Rev A 03-02-16
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