TGA2963 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 6 – 18GHz 20W GaN Power Amplifier

Applications
 Test Instrumentation
 Electronic Warfare (EW)
 Radar
 Communications
TGA2963
6 – 18GHz 20W GaN Power Amplifier
Product Features
 Frequency Range: 6 – 18GHz
 P_OUT: >43dBm @ PIN = 23dBm
 PAE: >20% @ PIN = 23dBm
 Large Signal Gain: >20dB @ PIN = 23dBm
 Small Signal Gain: >26dB
 Return Loss: >6.5dB
 Bias: V_D = 20V, I_DQ = 2500mA, V_G = -2.3V Typical
 Chip Dimensions: 5.4 x 6.85 x 0.10 mm
Functional Block Diagram
23
4
56
1
7
12 11
10
98
General Description
Pad Configuration
Qorvo’s TGA2963 is a broadband high power MMIC
amplifier fabricated on Qorvo’s production 0.15um GaN
on SiC process (QGAN15). The TGA2963 operates from
6 – 18GHz and provides more than 20W saturated output
power with power-added efficiency >20% and large-signal
gain >20 dB. This combination of wideband performance
provides the flexibility designers are looking for to
improve system performance while reducing size and
cost.
The TGA2963 is matched to 50Ω with integrated DC
blocking capacitors on both RF I/O ports simplifying
system integration. The broadband performance makes it
ideally suited in support of test instrumentation and
electronic warefare, as well as, supporting multiple radar
and communication bands.
The TGA2963 is 100% DC and RF tested on-wafer to
ensure compliance to electrical specifications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad No.
1
2, 12
3, 11
4, 10
5, 9
6, 8
7
Symbol
RF In
V_G12
V_D1
V_D2
V_G3
V_D3
RF Out
Ordering Information
Part
TGA2963
ECCN Description
3A001.b.2.c
6 – 18GHz 20W GaN
Power Amplifier
Datasheet: Rev - 03-25-16
© 2016 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com