TGA2924-SG Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – 10 Watt MMDS Packaged Amplifier

Advance Product Information
Aug 16, 2005
10 Watt MMDS Packaged Amplifier
TGA2924-SG
Key Features
• 2. 6 GHz Application Frequency Range
• 12 dB Nominal Gain
• 40 dBm Nominal Psat
• 2.5% EVM at 30 dBm output power
• Internally Partially Matched
• IMD3 -45 dBc @ 28 dBm SCL, Typical
• Bias Conditions: 8 V @ 1.2 A (Quiescent)
• 0.5 µm HFET Technology
• 2 lead Cu-alloy base package
Primary Applications
• MMDS Pt-Pt and Pt-Multi Pt Radio
• S-Band Power Amplifiers
Product Description
The TGA2924-SG HPA provides 12
dB of gain, 10 W of output power at
2.6 GHz and 2.5% EVM at 30 dBm
output power. The device is ideally
suited for high linearity, high power
wireless data applications such as
MMDS Point-to-Point or Point-to-
Multi-Point radios. The package has
a high thermal conductivity copper
alloy base. Internal partial matching
simplifies system board layout by
requiring a minimum of external
components.
Fixtured Measured Performance
Bias Conditions: Vd = 8 V, Idq =1.2 A
Performance data taken in a 2.6 GHz application circuit
15
10
S21
5
0
S11
-5
-10
S22
-15
-20
-25
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3
Lead-Free & RoHS compliant.
Evaluation Boards are available.
Frequency (GHz)
40.5
40
39.5
39
P2dB
38.5
38
P1dB
37.5
37
36.5
36
35.5
2.4 2.45 2.5 2.55 2.6 2.65 2.7 2.75 2.8
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
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