TGA2818_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – S-Band 30 W GaN Power Amplifier

Applications
• Radar
TGA2818
S-Band 30 W GaN Power Amplifier
Product Features
• Frequency Range: 2.8 - 3.7 GHz
• Pout: > 45.5 dBm (Pin=27 dBm)
• Large Signal Gain: > 18.5 dB (Pin=27 dBm)
• PAE: > 45 % (Pin=27 dBm)
• Bias: VD=28 V, IDQ=200 mA, VG=-2.65 V (Typ)
• Chip Dimensions: 2.350 x 4.000 x 0.10 mm
Functional Block Diagram
2
3
J1 ¹
RF In
6 _J2
RF Out
4
5
General Description
TriQuint’s TGA2818 is a high-power, S-band
amplifier fabricated on TriQuint’s TQGaN25 0.25um
GaN on SiC production process. Covering 2.8-3.7
GHz, the TGA2818 provides greater than 45 dBm of
saturated output power and greater than 18 dB of
large-signal gain while achieving greater than 45%
power added efficiency.
The TGA2818 can also support a variety of
operating conditions to best support system
requirements. With good thermal properties, it can
support a range of bias voltages and will perform
well under both short and long pulse applications.
The TGA2818 is matched to 50 ohms. It is ideal for
use in both commercial and military radar systems.
Lead-free and RoHS compliant.
Pad Configuration
Pad Number
1
2
3
4
5
6
Symbol
RF Input
VG1
VG2
VD1
VD2
RF Output
Ordering Information
Part
TGA2818
ECCN
EAR99
Description
S-Band 30 W GaN
Power Amplifier
Datasheet: Rev - 12-17-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com