TGA2818-SM_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – S-Band 30 W GaN Power Amplifier

Applications
• Military Radar
• Civilian Radar
• Wideband Amplifiers
TGA2818-SM
S-Band 30 W GaN Power Amplifier
Product Features
• Frequency Range: 2.8 - 3.7 GHz
• Pout: > 45.5 dBm (Pin=27 dBm)
• Large Signal Gain: > 18.0 dB (Pin=27 dBm)
• PAE: > 47 % (Pin=27 dBm)
• Bias: VD=28 V, IDQ=200 mA, VG=-2.65 V (Typ)
• Package Dimensions: 6.0 x 6.0 x 0.85 mm
General Description
TriQuint’s TGA2818-SM is a high-power, S-band
amplifier fabricated on TriQuint’s TQGaN25 0.25um
GaN on SiC production process. Covering 2.8-3.7
GHz, the TGA2818-SM provides greater than 45.5
dBm of saturated output power and greater than
18.0 dB of large-signal gain while achieving greater
than 47 % power added efficiency.
The TGA2818-SM can also support a variety of
operating conditions to best support system
requirements. With good thermal properties, it can
support a range of bias voltages and will perform
well under pulse applications. The TGA2818-SM is
matched to 50 ohms. It is ideal for use in both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation boards available on request.
Functional Block Diagram
28 27 26 25 24 23 22
1
2
3
RF In 4
5
6
7
21
20
19
18 RF Out
17
16
29
15
8 9 10 11 12 13 14
Pad Configuration
Pad Number
4
18
22, 23
26
27
28
Symbol
RF Input
RF Output
VD2
VD1
VG2
VG1
Ordering Information
Part
TGA2818-SM
TGA2818-
SM_EVB
ECCN
EAR99
EAR99
Description
S-Band 30 W GaN
Power Amplifier
TGA2818-SM
Evaluation Board
Datasheet: Rev – A 03-25-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com