TGA2817-SM_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – S-Band 60 W GaN Power Amplifier

Applications
• Military Radar
• Commercial Radar
• Wideband Amplifiers
TGA2817-SM
S-Band 60 W GaN Power Amplifier
Product Features
• Frequency Range: 2.9 – 3.5 GHz
• Pout: > 48 dBm (at Pin = 24 dBm)
• Large Signal Gain: > 24 dB (at Pin = 24 dBm)
• PAE: > 54 % (at Pin = 24 dBm)
• Bias: VD = 28 V, IDQ = 200 mA, VG = −2.8 V (Typ)
• Package Dimensions: 7.00 x 7.00 x 0.85 mm
General Description
TriQuint’s TGA2817-SM is a high-power, S-band
amplifier fabricated on TriQuint’s TQGaN25 0.25um
GaN on SiC production process. Covering 2.9-3.5
GHz, the TGA2817-SM provides > 48 dBm of
saturated output power and > 24 dB of large-signal
gain while achieving > 54 % power added efficiency.
The TGA2817-SM can also support a variety of
operating conditions to best support system
requirements. With good thermal properties, it can
support a range of bias voltages and will perform well
under pulse applications. The TGA2817-SM is
matched to 50 ohms with integrated DC blocking
caps on both I/O ports. It is ideal for use in both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation board available on request.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1
2
3
4
5
RF In 6
RF In 7
8
9
10
11
12
36
35
34
33
32
31 RF Out
30 RF Out
29
28
27
26
25
13 14 15 16 17 18 19 20 21 22 23 24
Pad Configuration
Pad Number
Symbol
6, 7
RF Input
13, 48
VG1
15, 46
VD1
17, 44
VG2
23, 38
VD2
30, 31
RF Output
1-5, 8-12, 14, 16, 18-22,
24-29, 32-37, 39-43, 45, 47, GND
49
Ordering Information
Part
ECCN Description
TGA2817-SM
3A001.b.2.a
S-Band 60 W GaN
Power Amplifier
TGA2817-SM_EVB
EAR99
TGA2817-SM
Evaluation Board
Datasheet: Rev - A 03-11-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com