TGA2814-SM_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 3.1 to 3.5 GHz 80W GaN Power Amplifier

Applications
• Military Radar
• Commercial Radar
• Wideband Amplifiers
TGA2814-SM
3.1 – 3.5 GHz 80W GaN Power Amplifier
Product Features
• Frequency Range: 3.1 – 3.5 GHz
• Output Power: 49.5 dBm (at Pin = 25 dBm)
• Power Gain > 24 dB (at Pin = 25 dBm)
• PAE: 55% (at Pin = 25 dBm)
• Bias: VD = 30 V, IDQ = 200 mA, VG = –2.90 V Typical
• Package Dimensions: 7.0 x 7.0 x 0.85 mm
General Description
TriQuint’s TGA2814-SM is a high-power, S-band amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process (TQGaN25).The TGA2814-SM covers 3.1 – 3.5
GHz and provides > 80 W of saturated output power, 24
dB of large-signal gain, and achieves 55 % power-added
efficiency.
The TGA2814-SM can also support a variety of operating
conditions to best support system requirements. With
good thermal properties, it can support a range of bias
voltages and performs well under pulse operation.
With DC blocking capacitors on both RF ports, which are
matched to 50 ohms, the TGA2814-SM is ideal for both
commercial and military radar systems.
Lead-free and RoHS compliant.
Evaluation boards are available on request.
Functional Block Diagram
48 47 46 45 44 43 42 41 40 39 38 37
1
2
3
4
5
RF In 6
RF In 7
8
9
10
11
12
Pad Con13f1ig4 1u5r1a6 t1i7o1n8 19 20 21 22 23 24
Pad No.
1-5, 8-12, 14, 16, 18-21, 24-
29, 32-37, 40-43, 45, 47, 49
6, 7
13, 48
15, 46
17, 44
22, 23, 38, 39
30, 31
Symbol
GND
RF Input
VG1
VD1
VG2
VD2
RF Output
36
35
34
33
32
31 RF Out
30 RF Out
29
28
27
26
25
Ordering Information
Part
TGA2814-SM
TGA2814-
SM_EVB
ECCN
3A001.b.2.a
EAR99
Description
3.1 – 3.5 GHz 80W
GaN Power Amplifier
TGA2814-SM
Evaluation Board
Datasheet: Rev - 02-16-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com