TGA2814-CP_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 3.1 to 3.6 GHz, 80W GaN Power Amplifier

Applications
 Radar
TGA2814-CP
3.1 to 3.6 GHz, 80W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 3.1 – 3.6 GHz
 Pout: 49 dBm at PIN = 27 dBm
 PAE: 50 % Pulsed
1
10
 Power Gain: 23 dB at PIN = 27 dBm
 Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical,
pulsed (PW = 15 ms, DC = 30 %)
2
3
9
8
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
4
7
 Package base is pure Cu offering superior thermal
5
6
management
General Description
TriQuint’s TGA2814-CP is a packaged high-power
S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25
um GaN on SiC process. Operating from 3.1 to 3.6
GHz, the TGA2814-CP achieves 80 W saturated output
power, a power-added efficiency of 50 %, and power
gain of 23 dB.
The TGA2814-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under both short and long pulse
conditions. Both RF ports are internally DC blocked and
matched to 50 ohms allowing for simple system
integration.
The TGA2814-CP is ideally suited for both commercial
and defense applications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2814-CP
ECCN Description
3A001.b.2.a
3.1 – 3.6 GHz, 80 W
GaN Power Amplifier
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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