TGA2813-CP_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 3.1 to 3.6 GHz, 100W GaN Power Amplifier

Applications
 Radar
TGA2813-CP
3.1 to 3.6 GHz, 100W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 3.1 – 3.6 GHz
 Pout: 50 dBm (at PIN = 27 dBm)
 Power Gain: 23 dB (at PIN = 27 dBm)
 PAE: 51 % CW
1
10
 Bias: VD = 30 V pulsed (PW = 15 ms, DC = 30 %),
IDQ = 300 mA, VG = -3 V Typical
2
3
9
8
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
4
7
 Package base is pure Cu offering superior thermal
5
6
management
General Description
TriQuint’s TGA2813-CP is a packaged high-power
S-Band amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Operating from 3.1 to 3.6
GHz, the TGA2813-CP achieves 100 W saturated output
power, a power-added efficiency of >50%, and 23 dB
power gain.
The TGA2813-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages
and performs well under both short and long pulsed
conditions. Both RF ports are internally DC blocked and
matched to 50 ohms allowing for simple system
integration.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2813-CP
ECCN Description
3A001.b.2.a
3.1 – 3.6 GHz, 100 W
GaN Power Amplifier
Preliminary Datasheet: 09-18-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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