TGA2710 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 10.5 - 12GHz High Power Amplifier

Advance Product Information
September 1, 2005
10.5 – 12GHz High Power Amplifier
TGA2710
Key Features
• Frequency Range: 10.5 -12.0 GHz
• 38 dBm Nominal Output Power
• 19 dB Nominal Gain
• Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive)
• 0.25 um 3MI pHEMT Technology
• Chip Dimensions 3.52 x 2.61 x 0.10 mm
(0.139 x 0.103 x 0.004 in)
Primary Applications
• Point-to-Point Radio
• Communications
Product Description
The TriQuint TGA2710 is a High Power
Amplifier MMIC for 10.5 – 12GHz applications.
The part is designed using TriQuint’s 0.25um
3MI pHEMT production process.
The TGA2710 nominally provides 38 dBm
output power and 41% PAE for bias of 9V,
1.05A. The typical gain is 19dB.
The part is ideally suited for low cost markets
such as Point-to-Point Radio and
Communications.
The TGA2710 is 100% DC and RF tested on-
wafer to ensure performance compliance.
The TGA2710 has a protective surface
passivation layer providing environmental
robustness.
Lead-Free & RoHS compliant.
Measured Fixtured Data
24
23
22
21
20
19
18
17
16
7V, 1.4A
8V, 1.4A
15
9V, 1.05A
14
10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12
Frequency (GHz)
40
39
38
37
36
35
34
33
32
7V, 1.4A
8V, 1.4A
31
9V, 1.05A
30
10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
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