TGA2627-SM_15 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 6 to 12 GHz GaN Driver Amplifier

Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)
TGA2627-SM
6 - 12 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 6 - 12 GHz
• Push-Pull Configuration
• Low Harmonic Content; ≤ -40 dBc at Psat
• Small Signal Gain: > 27 dB
• Power: > 32 dBm
• PAE: > 15 %
• IM3: < -20 dBc
• Input Return Loss > 15 dB
• Output Return Loss > 10 dB
• Bias: VD = 25 V, IDQ = 200 mA
• Package Dimensions: 5.0 x 5.0 x 1.42 mm
General Description
TriQuint's TGA2627-SM is a push-pull driver amplifier
fabricated on TriQuint's TQGaN25 0.25um GaN on SiC
production process. The TGA2627-SM operates from 6
to 12 GHz and provides 32 dBm of output power with 18
dB of large signal gain and greater than 20 % power-
added efficiency. The push-pull topology yields > 40dB
of harmonic suppression at Psat.
Using GaN MMIC technology and air-cavity ceramic
QFN packaging, the TGA2627-SM provides a low cost
driver solution that provides the added benefit of
operating on the same voltage rail as the corresponding
GaN HPA. It can also serve as the output power
amplifier on lower power architectures.
The TGA2627-SM is offered in a 5x5 mm air-cavity QFN
with an aluminum nitride base and LCP lid. It is well-
matched to 50 ohms and includes integrated DC
blocking caps on both RF ports allowing for simple
system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Functional Block Diagram
Pad Configuration
Pad Number
1-4, 6-9,11, 13, 15-19, 21-26, 28,
30, 32
5
10, 31
12, 29
14, 27
20
Symbol
GND
RF Input
VG12
VD
VG3
RF Output
Ordering Information
Part
ECCN
TGA2627-SM
EAR99
Description
6 -12 GHz GaN
Driver Amplifier
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
- 1 of 16 -
Disclaimer: Subject to change without notice
www.triquint.com