TGA2625_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 10 to 11GHz 20W GaN Power Amplifier

Applications
 Radar
 Communications
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Product Features
 Frequency Range: 10 – 11GHz
 PSAT: 43dBm @ PIN = 15dBm
 P1dB: >40dBm
 PAE: >42% @ PIN = 15dBm
 Large Signal Gain: 28dB
 Small Signal Gain: 37dB
 Return Loss: >11dB
 Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical
 Pulsed VD: PW = 100us and DC = 10%
 Chip Dimensions: 5.0 x 2.62 x 0.10 mm
Functional Block Diagram
2
3
45
1
6
10
9
87
General Description
TriQuint’s TGA2625 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2625 operates from 10–
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 20W of saturated output
power with 28dB of large signal gain and greater than
42% power-added efficiency, the TGA2625 provides the
level of performance demanded by today’s system
architectures. Depending on the system requirements,
the TGA2625 can support cost saving initiatives on
existing systems while supporting next generation
systems with increased performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2625
ECCN Description
3A001.b.2.b
10 – 11GHz 20W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com