TGA2624_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 9 to 10GHz 18W GaN Power Amplifier

Applications
 Weather and Marine Radar.
TGA2624
9 – 10GHz 18W GaN Power Amplifier
Product Features
 Frequency Range: 9 – 10GHz
 PSAT: 42.5dBm @ PIN = 15dBm
 P1dB: >38dBm
 PAE: >40% @ PIN = 15dBm
 Large Signal Gain: 27.5dB
 Small Signal Gain: >35dB
 Return Loss: >11dB
 Bias: VD = 28V, IDQ = 365mA, VG = -2.7V Typical
 Pulsed VD: PW = 100us and DC = 10%
 Chip Dimensions: 5.0 x 2.62 x 0.10 mm
Functional Block Diagram
2
3
45
1
6
10
9
87
General Description
TriQuint’s TGA2624 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2624 operates from 9 – 10GHz
and provides a superior combination of power, gain and
efficiency. Achieving 18W of saturated output power with
27.5dB of large signal gain and greater than 40% power-
added efficiency, the TGA2624 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2624
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2624
ECCN Description
3A001.b.2.b
9 – 10GHz 18W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com