TGA2623-CP_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 10 to 11 GHz 32 W GaN Power Amplifier

Applications
 X-band Radar
TGA2623-CP
10 – 11 GHz 32 W GaN Power Amplifier
Product Features
 Frequency Range: 10 – 11 GHz
 PSAT: 45 dBm @ PIN = 18 dBm
 PAE: >41% @ PIN = 18 dBm
 Power Gain: 27 dB @ PIN = 18 dBm
 Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical
(Pulsed VD: PW = 100 us and DC = 10%)
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
 Package base is pure Cu offering superior thermal
management
Functional Block Diagram
General Description
TriQuint’s TGA2623-CP is a packaged, high power X-
band amplifier fabricated on TriQuint’s TQGaN25 0.25 um
GaN on SiC production process. Operating from 10 – 11
GHz, the TGA2623-CP achieves 32 W saturated output
power, a power-added efficiency of greater than 41 %,
and power gain of 27 dB.
The TGA2623-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. It can support a range of bias voltages and
performs well under both pulsed and CW conditions.
Both RF ports are internally DC blocked and matched to
50 ohms allowing for simple system integration.
The TGA2623-CP is ideally suited for both commercial
and defense applications.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RF In
VD
RF Out
Ordering Information
Part
TGA2623-CP
ECCN Description
3A001.b.2.b
10 – 11 GHz 32 W
GaN Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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