TGA2622_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 9 to 10GHz 40W GaN Power Amplifier

Applications
 Weather and Marine Radar
TGA2622
9 – 10GHz 40W GaN Power Amplifier
Product Features
 Frequency Range: 9 – 10GHz
 PSAT: 46dBm @ PIN = 18dBm
 P1dB: >40dBm
 PAE: >46% @ PIN = 18dBm
 Large Signal Gain: 28dB
 Small Signal Gain: 32dB
 Bias: VD = 28V, IDQ = 290mA, VG = -2.7V Typical
 Pulsed VD: PW = 100us and DC = 10%
 Chip Dimensions: 5.0 x 4.86 x 0.10 mm
Functional Block Diagram
2
3
45
1
6
10
9
87
General Description
TriQuint’s TGA2622 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2622 operates from 9 – 10GHz
and provides a superior combination of power, gain and
efficiency. Achieving 40W of saturated output power with
28dB of large signal gain and 45% power-added
efficiency, the TGA2622 provides the level of
performance demanded by today’s system architectures.
Depending on the system requirements, the TGA2622
can support cost saving initiatives on existing systems
while supporting next generation systems with increased
performance.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
4, 8
3, 9
5, 7
6
Symbol
RF In
VG1-2
VG3
VD1-2
VD3
RF Out
Ordering Information
Part
TGA2622
ECCN Description
3A001.b.2.b
9 – 10GHz 40W GaN
Power Amplifier
Preliminary Datasheet: Rev - 11-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com