TGA2621_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 16 to 18 GHz 1 W GaAs Power Amplifier

Applications
 Commercial and Military Radar
 Satellite Communications
TGA2621
16 - 18 GHz 1 W GaAs Power Amplifier
Product Features
 Frequency Range: 16 - 18 GHz
 Psat: 30.5 dBm at Pin = 10 dBm
 PAE: 28 % at Pin = 10 dBm
 Small Signal Gain: 26.5 dB
 Input Return Loss: > 13 dB
 Bias: VD = 6 V, IDQ = 400 mA, VG = -0.6 V Typical
 Chip Dimensions: 2.0 x 2.5 x 0.1 mm
Functional Block Diagram
2
3
4
1
5
General Description
TriQuint’s TGA2621 is a Ku-band Power Amplifier
fabricated on TriQuint’s TQPHT15 0.15 μm GaAs
pHEMT process. The TGA2621 operates from 16 to 18
GHz and typically provides 1 W of saturated output
power with an efficiency of 28% PAE and 26.5 dB of
small signal gain.
The TGA2621 is well suited to support both radar and
satellite communications as a driver or low power
amplifier.
Both RF ports have intergrated DC blocking caps and
are fully matched to 50 ohms allowing for simple
system integration.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
Symbol
RFIN
VG
VD1
VD2
RFOUT
Ordering Information
Part
TGA2621
ECCN Description
EAR99
16 - 18 GHz GaAs PA
Preliminary Datasheet: Rev - 12-30-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com