TGA2621-SM_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 16 to 18.5 GHz 1 W GaAs Power Amplifier

Applications
 Commercial and Military Radar
 Satellite Communications
TGA2621-SM
16 – 18.5 GHz 1 W GaAs Power Amplifier
Product Features
 Frequency Range: 16 – 18.5 GHz
 PSAT: >30 dBm at Pin = 10 dBm
 PAE: >23 % at Pin = 10 dBm
 Small Signal Gain: >24.5 dB
 Input Return Loss: > 10 dB
 Bias: V_D = 6 V, I_DQ = 500 mA, V_G = -0.6 V
Typical
 Package Dimensions: 5.0 x 5.0 x 1.45 mm
Functional Block Diagram
General Description
TriQuint’s TGA2621-SM is a packaged Ku-band Power
Amplifier fabricated on TriQuint’s TQPHT15 0.15 μm
GaAs pHEMT process. The TGA2621-SM operates
from 16 to 18.5 GHz and typically provides greater than
1W of saturated output power with greater than 23%
PAE and greater than 24.5 dB of small signal gain.
The TGA2621-SM is available in a low cost, surface
mount 32 lead 5x5 mm air-cavity ceramic QFN. It is
ideally suited to support both radar and satellite
communications as a driver or low power amplifier.
Both RF ports have integrated DC blocking caps and
are fully matched to 50 ohms allowing for simple
system integration.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
Symbol
1, 2, 4, 6, 8-9,16-17,19, 21, 23-25, 32-33 Gnd
3, 7, 10-15, 18, 22, 26, 28, 30
N/C
5
RF_IN
20
RF_OUT
27
V_D2
29
V_D1
31
V_G
Ordering Information
Part
ECCN Description
TGA2621-SM EAR99 16 – 18.5 GHz 1 W GaAs PA
Preliminary Datasheet: Rev - 11-07-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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