TGA2612-SM_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 6 to 12 GHz GaN LNA

Applications
 Commercial and Military Radar
 Communications
TGA2612-SM
6 - 12 GHz GaN LNA
Product Features
 Frequency Range: 6 – 12 GHz
 NF: 2 dB
 P1dB: 19 dBm
 OTOI: 28 dBm
 Small Signal Gain: 22 dB
 Return Loss: >7 dB
 Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V Typical
 Package Dimensions: 4 x 4 x 0.85 mm
Functional Block Diagram
General Description
TriQuint’s TGA2612-SM is a packaged broadband Low
Noise Amplifier fabricated on TriQuint’s TQGaN25
0.25um GaN on SiC process. Covering 6–12 GHz, the
TGA2612-SM typically provides >23 dM small signal
gain, 19 dBm P1dB, and 27 dBm OTOI with <2 dB of
Noise Figure. In addition to the high electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2612-SM provides flexibility regarding
receive chain protection resulting in lower costs and
reduced board space.
The TGA2612-SM is available in a surface mount 20-
lead 4x4mm QFN. It is ideally suited for both radar and
communications applications.
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2612-SM is ideally
suited for both military and commercial radar and
communications applications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1, 2, 4-9, 11, 12, 14,
15, 17-20
3
10
13
16
Symbol
N/C
RFIN
VG
RFOUT
VD
Ordering Information
Part
TGA2612-SM
ECCN
EAR99
Description
6 – 12 GHz GaN LNA
Preliminary Datasheet: Rev - 01-29-15
© 2014 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com