TGA2611 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 2-6 GHz GaN LNA

Applications
 Commercial and Military Radar
 Satellite Communications
TGA2611
2-6 GHz GaN LNA
Product Features
 Frequency Range: 2–6GHz
 NF: 1.5dB
 OTOI: 32dBm
 Small Signal Gain: 25dB
 Return Loss: >10dB
 P1dB: 22dBm
 Bias: V_D = 10V, I_DQ = 110mA, V_G = -2.3V Typical
 Chip Dimensions: 2.1 x 1.5 x 0.10mm
Functional Block Diagram
General Description
TriQuint’s TGA2611 is a broadband Low Noise
Amplifier fabricated on TriQuint’s production 0.25um
GaN on SiC process (TQGaN25). Covering 2–6GHz,
the TGA2611 typically provides 22dBm P1dB, 25dB of
small signal gain, 1.5dB of noise figure and 32dBm of
OTOI. In addition to the high overall electrical
performance, this GaN amplifier also provides a high
level of input power robustness. Able to survive up to
2W of input power without performance degradation,
TriQuint’s TGA2611 provides flexibility regarding
receive chain protection never before seen with GaAs
technology.
Pad Configuration
Pad No.
1
2
3
4
Symbol
RF In
V_D
RF Out
V_G
Fully matched to 50 ohms with integrated DC blocking
caps on both I/O ports, the TGA2611 is ideally suited
for radar and satellite communications.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2611
ECCN Description
EAR99 2 – 6 GHz GaN LNA
Preliminary Datasheet: Rev - 11-8-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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