TGA2597_15 Datasheet, PDF (1/14 Pages) TriQuint Semiconductor – 2 6 GHz GaN Driver Amplifier

Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)
TGA2597
2-6 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 2-6 GHz
• Output Power: > 31.5 dBm (PIN = 18 dBm)
• PAE: > 31 % (PIN = 18 dBm)
• Large Signal Gain: > 13.5 dB (PIN = 18 dBm)
• Small Signal Gain: > 24 dB
• VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ.
• Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm
Functional Block Diagram
2
3
J1 ¹
RF In
4 _J2
RF Out
6
5
General Description
TriQuint's TGA2597 is a driver amplifier fabricated on
TriQuint's TQGaN25 0.25um GaN on SiC production
process. The TGA2597 operates from 2.0 to 6.0 GHz
and provides > 31.5 dBm of output power with > 13.5
dB of large signal gain and > 31 % power-added
efficiency.
The TGA2597 operates with the same drain bias as
corresponding GaN HPA’s making it an ideal driver
amplifier. It can also function as the output amplifier
in lower power applications. The TGA2597 is
internally matched to 50 ohms, and includes
integrated DC blocks on both RF ports allowing for
simple system integration.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RF In
VD1
VD2
RF Out
VG2
VG1
Ordering Information
Part
TGA2597
ECCN Description
EAR99
2-6 GHz GaN Driver
Amplifier
Datasheet: Rev - 10-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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