TGA2597-SM_15 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 2 6 GHz GaN Driver Amplifier

Applications
• Commercial and Military Radar
• Communications
• Electronic Warfare (EW)
TGA2597-SM
2 - 6 GHz GaN Driver Amplifier
Product Features
• Frequency Range: 2 - 6 GHz
• Small Signal Gain: > 24 dB
• Power: > 32 dBm
• PAE: > 31 %
• IM3: < -24 dBc
• Bias: VD = 25 V, IDQ = 40 mA
• Package Dimensions: 4.0 x 4.0 x 0.85 mm
Functional Block Diagram
General Description
TriQuint's TGA2597-SM is a packaged driver amplifier
fabricated on TriQuint's TQGaN25 0.25um GaN on
SiC production process. The TGA2597-SM operates
from 2.0 to 6.0GHz and provides 32 dBm of output
power with14 dB of large signal gain and 31 % power-
added efficiency.
Using GaN MMIC technology and plastic packaging,
the TGA2597-SM provides a low cost driver solution
that provides the added benefit of operating on the
same voltage rail as the corresponding GaN HPA. It
can also serve as the output power amplifier in lower
power architectures.
The TGA2597-SM is offered in a 4x4 mm plastic
overmold QFN. It is internally matched to 50 ohms and
includes integrated DC blocking caps on both RF
ports allowing for simple system integration.
Lead-Free & RoHS compliant.
Evaluation Boards are available on request.
Pad Configuration
Pad Number
3
6
13
19
1-2,4-5,7-12,14-18, 20
21
Symbol
RF Input
VG
RF Output
VD
N/C
GND
Ordering Information
Part
ECCN
TGA2597-SM
EAR99
Description
2 - 6 GHz GaN
Driver Amplifier
Preliminary Datasheet: Rev - 09-05-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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