TGA2595-CP_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 27.5 to 31 GHz, 8 W GaN Power Amplifier

Applications
 Satellite Communications
TGA2595-CP
27.5 to 31 GHz, 8 W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 27.5 - 31 GHz
 Pout: 39 dBm (PIN = 18 dBm)
 PAE: > 22 % (PIN = 18 dBm)
 Power Gain: 21 dB (PIN = 18 dBm)
1
10
 IM3 @ 30 dBm/Tone = −27 dBc
2
9
 IM5 @ 30 dBm/Tone = −46 dBc
3
8
 Bias: VD = 20 V, IDQ = 560 mA, VG = −2.5 V typical
4
7
 Package Dimensions: 15.2 x 15.2 x 5.2 mm
5
6
 Package base is pure Cu offering superior thermal
management
General Description
TriQuint’s TGA2595-CP is a balanced Ka-Band power
amplifier fabricated on TriQuint’s TQGaN15 0.15 um
GaN on SiC process. The balanced configuration
supports low return loss and improves robustness into
non-ideal loads. Operating from 27.5 to 31 GHz, the
TGA2595-CP achieves 39 dBm saturated output power
with power-added efficiency of > 22 % and power gain of
21 dB.
The TGA2595-CP is packaged in a 10-lead 15x15 mm
bolt-down package with a Cu base for superior thermal
management. To simply system integration, the
TGA2595-CP is fully matched to 50 ohms with integrated
DC blocking capacitors on both I/O ports.
The TGA2595-CP is ideally suited for both commercial
and defense satellite communications.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2595-CP
ECCN Description
3A001.b.2.c
27.5 - 31 GHz, 8 W
GaN Power Amplifier
Preliminary Datasheet: 01-22-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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