TGA2594-HM_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 27 to 31 GHz GaN Power Amplifier

Applications
 Military SATCOM Terminals
 Commercial SATCOM Terminals
 Point-to-Point Digital Radio
 Point-to Multipoint Digital Radio
TGA2594-HM
27 to 31 GHz GaN Power Amplifier
Product Features
 Frequency Range: 27 - 31 GHz
 Pout: 36.5 dBm at PIN = 14 dBm
 PAE: 25 % CW
 Small Signal Gain: 25 dB
 IM3: -35 dBc @ 25 dBm Pout/Tone
 Bias: VD = 20 V, IDQ = 140 mA, VG = -3 V Typical
 Package Dimensions: 7 x 7 x 1.3 mm
Functional Block Diagram
22 21 20 19
1
18
2
17
3
16
4
15
5
14
6
23
13
7
12
8 9 10 11
General Description
TriQuint’s TGA2594-HM is a packaged power amplifier
fabricated on TriQuint’s 0.15um GaN on SiC process.
Operating from 27 to 31 GHz, the TGA2594-HM achieves
36.5 dBm saturated output power with a power-added
efficiency of 25%, and 25 dB small signal gain.
The TGA2594-HM is offered in a hermetically sealed 22-
lead 7x7 mm ceramic QFN designed for surface mount to
a printed circuit board. The package has a Cu base,
offering superior thermal management. The TGA2594-
HM is ideally suited to support both commercial and
military applications.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 Ohms.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
Symbol
1-3, 5-7, 9,10,12-14, 16-18, 20,
21, 23
GND
4
RFIN
8, 11
NC
15
RFOUT
19
VD
22
VG
Ordering Information
Part
TGA2594-HM
ECCN Description
3A001.b.2.c
27 – 31 GHz GaN
Power Amplifier
Preliminary Datasheet: 12-30-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com