TGA2590 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 6-12 GHz 30W GaN Power Amplifier

Applications
 Electronic Warfare
 Commercial and Military Radar
TGA2590
6-12 GHz 30W GaN Power Amplifier
Product Features
 Frequency Range: 6 - 12 GHz
 Output Power: > 45 dBm (PIN = 23 dBm)
 PAE: > 25 % (PIN = 23 dBm)
 Large Signal Gain: > 22.0 dB
 VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.
 Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm
Functional Block Diagram
General Description
Pad Configuration
TriQuint’s TGA2590 is a wideband power amplifier
fabricated on TriQuint’s production 0.25um GaN on
SiC process. The TGA2590 operates from 6 - 12GHz
and provides greater than 30W of saturated output
power with greater than 22 dB of large signal gain and
greater than 25% power-added efficiency.
The TGA2590 is fully matched to 50Ω with DC blocking
caps at both RF ports allowing for simple system
integration. The broadband performance supports
electronic warfare and radar across defense and
commercial markets.
1
2, 14
3, 13
4, 12
5, 11
6, 10
7, 9
8
Pad No.
Symbol
RF In
VG1
VG2
VD1
VD2
VG3
VD3
RF Out
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
The information contained on this data sheet is
technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or
transfer contrary to US law is prohibited.
Ordering Information
Part
ECCN
Description
TGA2590 3A001.b.2.b
6-12 GHz 30W PA
Datasheet: Rev - 05-08-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com