TGA2585_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 2.7 to 3.7GHz 18W GaN Power Amplifier

Applications
 Commercial and military radar
TGA2585
2.7 – 3.7GHz 18W GaN Power Amplifier
Product Features
 Frequency Range: 2.7 – 3.7GHz
 P_SAT: 42.8dBm at 28V
 PAE: 52%
 Small Signal Gain: 33dB
 Input Return Loss: >15dB
 Output Return Loss: >12dB
 Bias: V_D = 25-32V (CW or Pulsed), I_DQ = 225mA, V_G
= -2.5V Typical
 Pulsed VD: PP = 1ms, DC = 10%
 Chip Dimensions: 3.0 x 1.9 x 0.10 mm
Functional Block Diagram
2 34
56
1
J1
RF In
7
J2
RF Out
General Description
TriQuint’s TGA2585 is an S-band MMIC amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process (TQGaN25). Covering 2.7-3.7GHz, the
TGA2585 provides 18W of saturated output power and
33dB of small signal gain while achieving 52% power-
added efficiency. Higher power can be achieved at the
expense of PAE by increasing the drain voltage.
The TGA2585 is ideal for phase array S-band radars
and can support both short pulse and CW conditions.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50ohms.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1
2
3, 5
4
6
7
Symbol
RF In
V_G1
V_G2
V_D1
V_D2
RF Out
Ordering Information
Part
TGA2585
ECCN Description
3A001.b.2.a
2.7 – 3.7GHz 18W
GaN Power Amplifier
Preliminary Datasheet: Rev A 05-12-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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