TGA2585-SM Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – 2.7 to 3.7GHz, 18W GaN Power Amplifier

Applications
• Commercial and Military Radar
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Product Features
• Frequency Range: 2.7 - 3.7 GHz
• PSAT: 42.5 dBm
• PAE: > 50 %
• Small Signal Gain: 32 dB
• Return Loss: > 10 dB
• Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA,
VG = −2.5 V Typical
• Package Dimensions: 5.0 x 5.0 x 1.45 mm
QFN 5x5 mm 32L
Functional Block Diagram
32 31 30 29 28 27 26 25
1
2
RF OUT 3
4
5
6
7
8
24
23
22 RF IN
21
20
19
18
17
9 10 11 12 13 14 15 16
General Description
TriQuint’s TGA2585-SM is a packaged MMIC power
amplifier which operates from 2.7 to 3.7 GHz. The
TGA2585-SM is designed using TriQuint’s production
0.25-μm GaN on SiC process.
The TGA2585-SM typically provides 42.5 dBm of
saturated output power, > 50% power-added efficiency,
and 32 dB small signal gain. It can operate under both
pulse and CW conditions.
The TGA2585-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both commercial and defense related radar
applications.
Pin Configuration
Pad No.
1, 3-4, 6, 8-9, 13, 16-17, 19,
21, 23-25, 32
3
5, 7, 10-11, 15, 18, 20, 26-31
12
14
22
Symbol
GND
RF OUT
NC
DRAIN
GATE
RF IN
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 ohms.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part
TGA2585-SM
ECCN
EAR99
Description
2.7 - 3.7 GHz, 18 W
GaN Power Amplifier
Preliminary Datasheet: Rev-A 03-03-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com