TGA2579-2-FL_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 20W Ku-Band GaN Power Amplifier

Applications
 Ku-band Communications
TGA2579-2-FL
20W Ku-Band GaN Power Amplifier
Product Features
 Frequency Range: 14.0 – 15.35 GHz
 P_{SAT :} 43 dBm
 PAE: 27%
 Small Signal Gain: 35 dB
 Integrated Voltage Detector
 Bias: V_D = 25 V, I_DQ = 1.0 A, V_G = -2.4 V Typical
 Package Dimensions: 11.38 X 17.33 X 3.0 mm
Functional Block Diagram
1
14
2
13
3
12
4
11
5
10
6
9
7
8
General Description
TriQuint’s TGA2579-2-FL is a power amplifier operating
from 14.0 to 15.35 GHz and typically provides 43 dBm of
saturated output power, 27% power-added efficiency
and 35 dB of small signal gain at mid band.
The TGA2579-2-FL features low loss ground-signal-
ground (GSG) RF transitions designed to interface with a
coplanar waveguide multilayer board.
Ideally suited for Ku-band communications, the
TGA2579-2-FL supports key commercial and defense-
related frequency bands.
TriQuint’s 0.25um GaN on SiC process offers superior
electrical performance while maintaining high reliability.
In addition, the use of SiC substrates provides optimum
thermal performance necessary for reliable high power
operation.
Lead-free and RoHS compliant.
Pad Configuration
Pad No.
1, 7, 8, 14
2, 6
3, 5, 10, 12
4
9
11
13
Symbol
V_D
V_G
GND
RF IN
Voltage Detector
RF OUT
N/C
Ordering Information
Part
ECCN Description
TGA2579-2-FL 3A001.b.2.b GaN Power Amplifier
Preliminary Datasheet: Rev - 08-16-13
© 2013 TriQuint
- 1 of 12 -
Disclaimer: Subject to change without notice
www.triquint.com