TGA2578-CP_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – 2 to 6 GHz, 30W GaN Power Amplifier

Applications
 Electronic Warfare
 Radar
 Communications
 Test Instrumentation
 EMC Amplifier
TGA2578-CP
2 to 6 GHz, 30W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 2 – 6 GHz
 Pout: 45 dBm at PIN = 23 dBm
 PAE: >30% CW
 Small Signal Gain: >26 dB
1
10
 IM3: -30 dBc @ 30 dBm Pout/Tone
2
9
 Bias: VD = 28 V, IDQ = 400 mA, VG = -2.8 V Typical
3
8
 Package Dimensions: 15.2 x 15.2 x 3.5 mm
4
7
 Package base is pure Cu offering superior thermal
5
6
management
General Description
TriQuint’s TGA2578-CP is a packaged wideband power
amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN
on SiC process. Operating from 2 to 6 GHz, the
TGA2578-CP achieves 30 W saturated output power
with a power-added efficiency of > 30 %, and > 26 dB
small signal gain.
The TGA2578-CP is offered in a 10-lead 15 x 15 mm
bolt-down package. The package has a pure Cu base,
offering superior thermal management. The TGA2578-
CP is ideally suited to support both commercial and
defense applications.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 Ohms.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pin Configuration
Pad No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
VG
GND
RFIN
VD
RFOUT
Ordering Information
Part
TGA2578-CP
ECCN Description
3A001.b.2.a
2 – 6 GHz, 30 W
GaN Power Amplifier
Preliminary Datasheet: 02-03-15
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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