TGA2576-FS_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 2.5 to 6GHz 40W GaN Power Amplifier

Applications
 Electronic Warfare
 Radar
 Test Instrumentation
 EMC Amplifier
TGA2576-FS
2.5 to 6GHz 40W GaN Power Amplifier
Product Features
 Frequency Range: 2.5 to 6 GHz
 P_SAT: 46.5 dBm @ P_IN = 26 dBm
 PAE: 35%
 Small Signal Gain: 29 dB
 Bias: Pulse V_D = 30 V, I_DQ = 1.55A, V_G = −2.4 V Typ
Pulse: PW = 150 us, DC = 5%
 Dimensions: 12.7 x 12.7 x 3.89 mm
Functional Block Diagram
General Description
TriQuint’s TGA2576-FS is a packaged wideband power
amplifier designed on TriQuint’s production 0.25 um
GaN on SiC process. Operating from 2.5 to 6 GHz, the
TGA2576-FS achieves 40 W of saturated output power,
greater than 35% power-added efficiency and 29 dB
small signal gain.
Both RF ports are fully matched to 50 Ω, the TGA2576-
FS is ideally suited to support both commercial and
defense related opportunities.
Pin Configuration
Pin No.
1, 3, 5, 7, 8, 10, 12, 14
2, 6
4
9, 13
11
Symbol
GND
V_G
RF_IN
V_D
RF_OUT
Lead-free and RoHS compliant
Evaluation Boards are available up on request.
Ordering Information
Part
ECCN Description
TGA2576-FS 3A001.b.2.a 2.5 to 6 GHz 40W GaN PA
Preliminary Datasheet: Rev B 1-08-15
© 2015 TriQuint
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Disclaimer: Subject to change without notice
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