TGA2576-FL_15 Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – 2.5 to 6 GHz GaN HEMT Power Amplifier

TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Applications
• Communications
• Electronic Warfare
• Test Instrumentation
• EMC Amplifier
Product Features
• Frequency Range: 2.5 – 6 GHz
• Psat: 45.5 dBm @ Pin = 26 dBm
• PAE: 35 %
• Small Signal Gain: 26 dB
• Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical
• Dimensions: 11.4 x 17.3 x 3.0 mm
Functional Block Diagram
1
10
2
9
3
8
4
7
5
6
General Description
TriQuint’s TGA2576-FL is a packaged wideband power
amplifier fabricated on TriQuint’s production-released
0.25um GaN on SiC process. Operating from 2.5 GHz
to 6 GHz, it achieves 45.5 dBm saturated output power,
35% PAE and 26 dB small signal gain.
Fully matched to 50 ohms and with integrated DC
blocking caps on both I/O ports, the TGA2576-FL is
ideally suited to support both commercial and defense
related opportunities.
Pin out Configuration
Pin #
1,5
2,4,7,9
3
6
8
10
Symbol
Vg
NC
RF In
Vd Bot
RF Out
Vd Top
Ordering Information
Part No. ECCN
Description
TGA2576-FL 3A001.b.2.a 2.5-6 GHz Power Amplifier
Preliminary Data Sheet: Rev A 08/25/11
© 2011 TriQuint Semiconductor, Inc.
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Disclaimer: Subject to change without notice
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