TGA2576-2-FL_15 Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – 2.5 to 6GHz 40W GaN Power Amplifier

Applications
 Communications
 Electronic Warfare
 Test Instrumentation
 EMC Amplifier
TGA2576-2-FL
2.5 to 6GHz 40W GaN Power Amplifier
Product Features
 Frequency Range: 2.5 to 6 GHz
 P_SAT: 46.5 dBm @ PIN = 26dBm, CW
 PAE: 36%
 Small Signal Gain: 29 dB
 Bias: V_D = 30 V, I_DQ = 1.55 A, V_G = −2.5 V Typical
 Dimensions: 11.4 x 17.3 x 3.0 mm.
Functional Block Diagram
General Description
TriQuint’s TGA2576-2-FL is a wideband power amplifier
fabricated on TriQuint’s proven 0.25um GaN on SiC
production technology. Operating from 2.5 to 6 GHz, the
TGA2576-2-FL achieves 40W of saturated output power,
greater than 36% power-added efficiency and 29dB
small signal gain.
For ideal thermal management and handling, the
TGA2576-2-FL is offered in a CuW-based flanged
packaged and can operate in both CW and pulsed
modes.
Pin Configuration
Pin No.
1, 5
2, 4, 7, 9
3
6, 10
8
Symbol
V_G
N/C
RF IN
V_D
RF OUT
Both RF ports are fully matched to 50Ω, the TGA2576-2-
FL is ideally suited to support a variety of commercial
and defense related applications.
Lead-free and RoHS compliant
Evaluation Boards are available up on request.
Ordering Information
Part
ECCN Description
TGA2576-2-FL 3A001.b.2.a 2.5 to 6GHz 40W GaN PA
Preliminary Datasheet: Rev A 01-8-15
© 2015 TriQuint
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