TGA2575_15 Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – Ka-Band 3 Watt Power Amplifier

TGA2575
Ka-Band 3 Watt Power Amplifier
Applications
 Military Radar
 Communications
TGA2575
Product Features
 Frequency Range: 32.0 – 38.0 GHz
 Power: 35.5 dBm Psat
 PAE: 22%
 Gain: 19 dB
 Return Loss: 12 dB
 Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
 Dimensions: 5.4 x 4.1 x 0.05 mm
General Description
TriQuint’s TGA2575 is a wideband power amplifier
fabricated on TriQuint’s production-released 0.15um
pwr-pHEMT process. Operating from 32 GHz to 38
GHz, it achieves 35.5 dBm saturated output power, 22%
PAE and 19 dB small signal gain over most of the band.
Fully matched to 50 ohms, ROHS compliant and with
integrated DC blocking caps on both I/O ports, the
TGA2575 is ideally suited to support both commercial
and defense related opportunities.
The TGA2575 is 100% DC and RF tested on-wafer to
ensure compliance to performance specifications.
Functional Block Diagram
Vg
Vd
6
5
TGA2575
1
RF In
4
RF Out
2
3
Vg
Vd
Bond Pad Configuration
Bond Pad #
1
2, 6
3, 5
4
Symbol
RF In
Vg
Vd
RF Out
Data Sheet: Rev A 8/22/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
TGA2575
ECCN
Description
3A001.b.2.d Ka-band Power Amplifier
- 1 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network^®