TGA2575-TS_15 Datasheet, PDF (1/12 Pages) TriQuint Semiconductor – Ka-Band 3 Watt Power Amplifier

TGA2575-TS
Ka-Band 3 Watt Power Amplifier
Applications
 Military Radar
 Communications
Product Features
 Frequency Range: 32.0 – 38.0 GHz
 Power: 35.5 dBm Psat
 PAE: 22%
 Gain: 19 dB
 Return Loss: 12 dB
 Bias: Vd = 6 V, Id = 2.1 A, Vg = -0.60 V Typical
 Dimensions: 5.31 x 8.92 x 0.49 mm
Functional Block Diagram
C5
100 pF
6
TGA2575-TS
C3
1000 pF
5
C1
1000 pF
1
4
C6
100 pF
C4
1000 pF
2
C2
1000 pF
3
General Description
Bond Pad Configuration
TriQuint’s TGA2575-TS is a wideband power amplifier
fabricated on TriQuint’s production-released 0.15um
pwr-pHEMT process. Operating from 32 GHz to 38
GHz, it achieves 35.5 dBm saturated output power, 22%
PAE and 19 dB small signal gain over most of the band.
The TGA2575-TS is a 2 mil thick GaAs die mounted on
a 10 mil thick CuMoCu carrier. This provides the
customer a known good die attach to assist in thermal
management and provide easier handling.
Pin #
1
2, 6
3, 5
4
Symbol
RF In
Vg
Vd
RF Out
Fully matched to 50 ohms, ROHS compliant and with
integrated DC blocking caps on both I/O ports, the
TGA2575-TS is ideally suited to support both
commercial and defense related opportunities.
The TGA2575-TS is 100% DC and RF tested on-wafer
to ensure compliance to performance specifications.
Lead-free and RoHS compliant
Data Sheet: Rev - 12/14/12
© 2012 TriQuint Semiconductor, Inc.
Ordering Information
Part No.
ECCN
Description
TGA2575-TS 3A001.b.2.d Ka-band Power Amplifier
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Disclaimer: Subject to change without notice
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