TGA2540-FL_15 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 30 to 3000 MHz GaN Power Amplifier

TGA2540-FL
30 to 3000 MHz GaN Power Amplifier
Key Features
• Frequency Range: 30 to 3000 MHz
• Psat: 39.5 dBm, P1dB: 35 dBm
• PAE: >40%
• Small Signal Gain: 19.5 dB
• TOI: 43 dBm
• NF: 4 dB
• Bias: Vd = 30 V, Idq = 360 mA,
Vg = -3.32 V Typical
• Package Dimensions: 25.15 x 14.48 x
4.85 mm
Measured Performance
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
42
100
41
90
40
80
Primary Application
• Military Communication
Product Description
39
70
38
60
The TGA2540-FL Power Amplifier provides
37
50
19.5 dB of small signal gain and greater than
36
40
8 W of output power across 30 to 3000 MHz
35
30
band. The TGA2540-FL is designed using
34
PAE
Psat
20
TriQuint’s standard 0.25-µm GaN HEMT
33
10
production process.
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0
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
Frequency (GHz)
25
The TGA2540-FL is available in a 4 lead
flange mount package and is ideally suited for
wideband communication transceivers.
20
15
Evaluation boards are available upon request.
10
5
GAIN
ORL
IRL
0
Lead-free and RoHS compliant.
-5
-10
-15
-20
-25
0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3
The information contained on this data sheet
is technical information as defined by 22 CFR
120.10 and is therefore US export controlled.
Export or transfer contrary to US law is
prohibited.
Frequency (GHz)
Datasheet subject to change without notice.
1
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
October 2009 © RevA