TGA2520 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 12-16 GHz High Linearity Amplifier

Advance Product Information
12-16 GHz High Linearity Amplifier
TGA2520
Key Features and Performance
• 31 dBm Midband Pout
• 33 dB Nominal Gain
• TOI > 40 dBm
• 0.5 µm pHEMT 3MI Technology
• Bias Conditions: 6 V, 850mA
• Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=6 V Id=850 mA
40
35
30
25
Gain
20
IRL
15
ORL
10
5
0
-5
-10
-15
-20
12
13
14
15
16
Freq (GHz)
45
43
41
39
37
35
33
31
29
27
25
12
TOI
P1dB
13
14
15
16
Freq (GHz)
Primary Applications
• Point-to-Point Radio
• VSAT
• Ku Band Sat-Com
Product Description
The TriQuint TGA2520 MMIC is an
extremely linear, high gain amplifier,
capable of 1 Watt output power at P1dB
for the frequency range of 12 – 16 GHz.
This performance makes this amplifier
ideally suited for Point to Point Radios
and current Ku-Band satellite ground
terminal applications. The TGA2520
utilizes TriQuint’s robust 0.5um power
pHEMT process coupled with 3 layer
Metal Inteconnect (3MI) technology. The
TGA2520 provides the high power
transmit function in an extremely compact
(< 3.5mm²) chip footprint.
The combination of a high-yield process,
electrical performance, and compact die
size is exactly what is required to support
the aggressive pricing targets required for
low-cost transmit modules. Each device
is 100% DC and RF tested on–wafer to
ensure performance compliance. The
device is available in chip form.
Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change
without notice.
TriQuint Semiconductor Texas www.triquint.com Phone : [phone] Fax: [phone] [e-mail]
1
June
2006