TGA2512_15 Datasheet, PDF (1/19 Pages) TriQuint Semiconductor – X Band Low Noise Amplifier

TGA2512
X Band Low Noise Amplifier
Key Features
• Typical Frequency Range: 5 - 15 GHz
• 1.4 dB Nominal Noise Figure
• 27 dB Nominal Gain
• Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.05 x 1.20 x 0.10 mm
(0.081 x 0.047 x 0.004 in)
Product Description
The TriQuint TGA2512 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 27dB typical from 5-15GHz,
the TGA2512 provides excellent noise
performance with typical midband NF 1.4dB,
while the balanced topology offers good return
loss typically 15dB.
The TGA2512 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part is also assembled in
self-biased mode, using a single +5V supply
connection from either side of the chip, or in
gate biased mode, allowing the user to control
the current for a particular applications.
In self-biased mode the TGA2512 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 13dBm. The small size of
2.46mm² allows ease of compaction into Multi-
Chip-Modules (MCMs).
The TGA2512 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
Primary Applications
• X-Band Radar
• EW, ECM
• Point-to-Point Radio
Measured Fixtured Data
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
40
30
GAIN
20
10
0
-10
IRL
-20
-30
ORL
-40
5 6 7 8 9 10 11 12 13 14 15
Frequency (GHz)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5 6 7 8 9 10 11 12 13 14 15
Frequency (GHz)
Datasheet subject to change without notice
1
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May 2009 © Rev -