TGA2512 Datasheet, PDF (1/18 Pages) TriQuint Semiconductor – X-Band Low Noise Amplifier

X-Band Low Noise Amplifier
Advance Product Information
July 14, 2005
TGA2512
Key Features
• Typical Frequency Range: 5 - 15 GHz
• 1.4 dB Nominal Noise Figure
• 27 dB Nominal Gain
• Bias: 5 V, 160 mA Gate Bias
5 V, 90 mA Self Bias
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 2.05 x 1.20 x 0.10 mm
(0.081 x 0.047 x 0.004 in)
Product Description
Primary Applications
The TriQuint TGA2512 is a wideband LNA with
AGC amplifier for EW, ECM, and RADAR
receiver or driver amplifier applications.
Offering high gain 27dB typical from 5-15GHz,
the TGA2512 provides excellent noise
performance with typical midband NF 1.4dB,
while the balanced topology offers good return
loss typically 15dB.
• X-Band Radar
• EW, ECM
• Point-to-Point Radio
Measured Fixtured Data
Bias Conditions: Gate Bias Vd = 5 V, Id = 160 mA
The TGA2512 is designed for maximum ease
of use. The large input FETs can handle up to
21dBm input power reliably, while the build-in
gain control provides 15dB of typical gain
control range. The part is also assembled in
self-biased mode, using a single +5V supply
connection from either side of the chip, or in
gate biased mode, allowing the user to control
the current for a particular applications.
In self-biased mode the TGA2512 offers 6dBm
typical P1dB, while in gate-biased mode the
typical P1dB is over 13dBm. The small size of
2.46mm² allows ease of compaction into Multi-
Chip-Modules (MCMs).
The TGA2512 is 100% DC and RF tested on-
wafer to ensure performance compliance.
Lead-Free & RoHS compliant.
40
30
GAIN
20
10
0
-10
IRL
-20
-30
ORL
-40
5 6 7 8 9 10 11 12 13 14 15
Frequency (GHz)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5 6 7 8 9 10 11 12 13 14 15
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
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