TGA2503-EPU Datasheet, PDF (1/11 Pages) TriQuint Semiconductor – 13 - 17 GHz 2 Watt, 32dB Power Amplifier

Advance Product Information
December 17, 2002
13 - 17 GHz 2 Watt, 32dB Power Amplifier TGA2503-EPU
Preliminary Measured Data
Bias Conditions: Vd=7V Id=680mA
40
5
S21
35
S11 0
S22
30
-5
Key Features and Performance
• 33 dBm Midband Pout
• 32 dB Nominal Gain
• 10 dB Typical Return Loss
• Built-in Directional Power Detector
with Reference
• 0.5µm pHEMT, 3MI Technology
• Bias Conditions: 7V, 680mA
• Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Primary Applications
• VSAT
• Point-to-Point
25
-10
20
-15
15
-20
10
-25
11 12 13 14 15 16 17 18 19
Frequency (GHz)
35
60
34
55
33
50
32
45
31
Psat 40
30
PAE ₃₅
29
30
28
25
27
20
26
15
25
10
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas Phone : [phone] Fax: [phone] Web: www.triquint.com
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