TGA2502 Datasheet, PDF (1/9 Pages) TriQuint Semiconductor – 13 - 15 GHz 4W Power Amplifier

Advance Product Information
February 7, 2006
13 - 15 GHz 4W Power Amplifier
TGA2502
Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Idq = 1.3A
30
25
20
15
10
5
0
-5
-10
12 12.5 13 13.5 14 14.5 15 15.5 16
Frequency (GHz)
Key Features
• 0.5 um pHEMT Technology
• >25 dB Nominal Gain
• >36 dBm Nominal Psat
• 44 dBm Nominal IP3 @ 14 GHz
• Bias 7V @ 1.3A Idq, 2.1A under RF drive
• Chip Dimensions 2.5mm x 2.7mm x 0.1 mm
Primary Applications
• Ku-Band VSAT Transmit
Bias Conditions: Vd = 7^,V,^qIdq = 1.3A
40
35
30
25
20
15
10
0
3
6
9
12
15
18
Pin (dBm)
13GHz
14GHz
15GHz
15.5GHz
16GHz
16.5GHz
17GHz
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas: Phone [phone] Fax [phone] Web: www.triquint.com
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