TGA2312-FL_15 Datasheet, PDF (1/13 Pages) TriQuint Semiconductor – X-band 60W GaN Power Amplifier

Applications
 Commercial and Military Radar
 Communications
TGA2312-FL
X-band 60W GaN Power Amplifier
Product Features
 Frequency Range: 9 – 10 GHz
 P_{SAT :} 48 dBm
 PAE: 38%
 Small Signal Gain: 13 dB
 Bias: V_D = 24 V, I_DQ = 2.4 A, V_G = -2.6 V Typical
 Pulsed: PW = 100us, DC = 10%
 Integrated Thermistor Temperature Monitor
 Package Dimensions: 17.4 x 24.0 x 3.9 mm
Functional Block Diagram
General Description
TriQuint’s TGA2312-FL is a high power amplifier
operating between 9 and 10 GHz and typically providing
48dBm of saturated output power, 38% power-added
efficiency and 13dB small signal gain.
Ideally suited for marine and weather radar, the
TGA2312-FL is packaged in a CuW-base, flanged
package for superior thermal management.
The TGA2312-FL uses TriQuint’s 0.25um GaN on SiC
technology which provides superior performance while
maintaining high reliability. In addition, the use of SiC
substrates provides optimum thermal performance
necessary for reliable high power operation.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2, 4, 7, 9
3
5
6
8
10
Symbol
V_G
N/C
RF IN
Temp (Thermistor)
V_D
RF OUT
V_D
Ordering Information
Part
ECCN Description
TGA2312-FL 3A001.b.3.b GaN High Power Amplifier
Preliminary Datasheet: Rev - 08-16-13
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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