TGA2239_15 Datasheet, PDF (1/15 Pages) TriQuint Semiconductor – 13 15.5 GHz 35 W GaN Power Amplifier

Applications
 Satellite Communications
 Data Link
 Radar
TGA2239
13 – 15.5 GHz 35 W GaN Power Amplifier
Product Features
Functional Block Diagram
 Frequency Range: 13 – 15.5 GHz
 P_SAT: >45.5 dBm @ PIN = 21 dBm
 PAE: >32% @ PIN = 21 dBm
 Large Signal Gain: >24.5 dB
 Small Signal Gain: 29.5 dB
 Bias: V_D = 22 V, I_DQ = 900 mA, V_G = -2.7 V Typical
 Process Technology GaN-TQGaN15
 Chip Dimensions: 5.00 x 6.65 x 0.10 mm
 Performance Under CW Operation
2
3
4
1
5
6
10
9
8
7
General Description
TriQuint’s TGA2239 is a Ku-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.15um GaN
on SiC process. The TGA2239 operates from 13 – 15.5
GHz and provides a superior combination of power, gain
and efficiency by achieving greater than 35 W of
saturated output power with 24.5dB of large signal gain
and greater than 32% power-added efficiency.
This superior performance provides system designers the
flexibility to improve system performance while reducing
size and cost.
The TGA2239 is fully matched to 50 Ohms with
integrated DC blocking capacitors on RF ports simplifying
system integration. It is ideally suited for military and
commercial Ku-band radar and satellite communication
systems.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 10
3, 9
4, 8
5, 7
6
Symbol
RF In
V_G1-2
V_G3
V_D1-2
V_D3
RF Out
Ordering Information
Part
TGA2239
ECCN Description
3A001.b.2.b
13 – 15.5 GHz 35W
GaN Power Amplifier
Preliminary Datasheet: Rev - 12-12-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com