TGA2237_15 Datasheet, PDF (1/16 Pages) TriQuint Semiconductor – 0.03 2.5GHz 10W GaN Power Amplifier

Applications
 Commercial and military radar
 Communications
 Electronic Warfare
TGA2237
0.03 – 2.5GHz 10W GaN Power Amplifier
Product Features
 Frequency Range: 0.03 – 2.5GHz
 P_SAT: 40dBm at PIN = 27dBm
 P1dB: >32dBm
 PAE: >52%
 Large Signal Gain: 13dB
 Small Signal Gain: 19dB
 IM3 @ 120mA POUT< 33dBm/tone: -30dBc
 IM5 @ 120mA POUT< 33dBm/tone: -30dBc
 Bias: V_D = 30V, I_DQ = 360mA, V_G = -2.5V Typical
 Wideband Flat Power
 Chip Dimensions: 2.4 x 1.8 x 0.10 mm
Functional Block Diagram
2
J1
RF In
1
J2
RF Out
3
General Description
TriQuint’s TGA2237 is a wideband distributed amplifier
fabricated on TriQuint’s production 0.25um GaN on SiC
process. The TGA2237 operates from 0.03 – 2.5GHz
and provides 10W of saturated output power with 13dB of
large signal gain and greater than 52% power-added
efficiency.
The broadband performance supports both radar and
communication applications across defense and
commercial markets as well as electronic warfare. The
TGA2237 is fully matched to 50Ω at both RF ports
allowing for simple system integration. DC blocks are
required on both RF ports and the drain voltage must be
injected through an off chip bias-tee on the RF output
port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2
3
Symbol
RF In
V_G
RF Out, V_D
Ordering Information
Part
TGA2237
ECCN
EAR99
Description
0.03 – 2.5GHz 10W
GaN Power Amplifier
Preliminary Datasheet: Rev - 02-21-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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