TGA2237-SM_15 Datasheet, PDF (1/18 Pages) TriQuint Semiconductor – 0.03 2.5GHz 10W GaN Power Amplifier

Applications
 Commercial and military radar
 Communications
 Electronic Warfare
TGA2237-SM
0.03 – 2.5GHz 10W GaN Power Amplifier
QFN 5x5 mm 32L
Product Features
 Frequency Range: 0.03 – 2.5GHz
 P_SAT: >40dBm at PIN = 27dBm
 P1dB: >33dBm
 PAE: >50%
 Large Signal Gain: >13dB
 Small Signal Gain: >19dB
 Input Return Loss: >10dB
 Output Return Loss: >12dB
 Bias: V_D = 32V, I_DQ = 360mA, V_G = -2.6V Typical
 Wideband Flat Power
 Package Dimensions: 5.0 x 5.0 x 1.45 mm
Functional Block Diagram
32 31 30 29 28 27 26 25
1
2
3
4
RF IN 5
6
7
8
24
23
22
21
20RF OUT
19
18
17
9 10 11 12 13 14 15 16
General Description
TriQuint’s TGA2237-SM is a wideband distributed
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2237-SM operates from 0.03 –
2.5GHz and provides greater than 10W of saturated
output power with greater than 13dB of large signal gain
and greater than 50% power-added efficiency.
The TGA2237-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both radar and communication applications
across defense and commercial markets as well as
electronic warfare. The TGA2237-SM is fully matched to
50Ω at both RF ports allowing for simple system
integration. DC blocks are required on both RF ports and
the drain voltage must be injected through an off chip
bias-tee on the RF output port.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
Symbol
1-2, 4, 6, 8-9, 16-17,19, 21, 23-25, 32 GND
3, 7, 10-15, 18, 22, 27-31
5
20
26
NC
RF IN
RF OUT,
DRAIN
GATE
Ordering Information
Part
TGA2237-SM
ECCN
EAR99
Description
0.03 – 2.5GHz 10W
GaN Power Amplifier
Preliminary Datasheet: Rev - 06-03-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
www.triquint.com